Samsung logo MPN: MZ-V9S2T0BW

Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

Released: Oct 26, 2024 2 years ago
Price not yet available US · Amazon.com

We track this product’s Amazon US price daily — it appears here as soon as it’s listed.

Capacity
2 TB
Form factor
M.2
Read speed
7250 MB/s
Write speed
6300 MB/s
Interface
PCI Express 4.0
NAND type
V-NAND TLC
NVMe
Y
Depth
2.38 mm
Width
80.15 mm
View 35 specifications
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Overview

Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Technical Specifications

Storage

5 SPECS
Read speed
7250 MB/s
NAND type
V-NAND TLC
Write speed
6300 MB/s
Capacity
2 TB
Form factor
M.2

Ports & Connectivity

1 SPEC
Interface
PCI Express 4.0

Physical

4 SPECS
Depth
2.38 mm
Width
80.15 mm
Height
80.15 mm
Weight
9 g

Logistics & Packaging

4 SPECS
Package depth
102 mm
Package width
139 mm
Package height
24 mm
Package weight
70 g

General

21 SPECS
NVMe
Yes
M.2 SSD size
2280 (22 x 80 mm)
NVMe version
2.0
TRIM support
Yes
Intended use
PC
Operating shock resistance
1500
Operating voltage
3.3 V
Random read (4KB)
1000000
Random write (4KB)
1350000
S.M.A.R.T. support
Yes
Hardware encryption
Yes
Security algorithms
256-bit AES
Power draw (idle)
0.06
Power draw (reading)
4.6 W
Power draw (writing)
4.2 W
Operating temperature
0 - 70
DevSlp (device sleep) support
Yes
Average power consumption (read)
4.6
Average power consumption (write)
4.2
MTBF
1500000
Power consumption DevSlp (device sleep)
5

Market Value History

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Sources

Product lifecycle

In production Launched 2024

Still listed as on-market by the manufacturer — actively sold and supported.

Lifecycle status is derived from catalog data and is indicative, not a manufacturer support guarantee.